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Same model may have multiple batches, images only for reference.
TK6A55DA Real Image
Same model may have multiple batches, images only for reference.

TK6A55DA

Part No TK6A55DA
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 5.5A TO-220SIS
Datasheet
TK6A55DA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.48 Ohm @ 2.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212914-TK6A55DA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK6A55DA CAD Model

Description

The TK6A55DA is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 35W (Tc)
  • Maximum Continuous Drain Current: 5.5A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 550V
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 1.48 Ohm @ 2.8A, 10V
  • Case/Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Supply and demand status: balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.3855 $71.9275
10+ $11.8041 $118.0410
16+ $11.4345 $182.9520
21+ $11.0661 $232.3881
27+ $10.6976 $288.8352
37+ $9.5911 $354.8707
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,920 pieces
MOQ: 5 pcs
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