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Same model may have multiple batches, images only for reference.
TK6Q60W,S1VQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK6Q60W,S1VQ

Part No TK6Q60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 6.2A IPAK / Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) IPAK Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.7V @ 310μA
Gate Charge (Qg) (Maximum) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 390pF @ 300V
Vgs (Maximum) ±30V
FET Feature Super Junction
Power Dissipation (Maximum) 60W (Tc)
Rds On (Maximum) @ Id, Vgs 820 mOhm @ 3.1A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Stub Leads, IPak
Win Source Part Number 796849-TK6Q60W,S1VQ
Popularity Medium
Supply and Demand Status Limited
Family Name TK6Q60W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK6Q60W,S1VQ CAD Model

Description

The Toshiba Semiconductor and Storage TK6Q60W,S1VQ is an N-channel Super Junction MOSFET.

  • Series: DTMOSIV
  • Continuous drain current: 6.2A (Ta)
  • Maximum power dissipation: 60W (Tc)
  • Drain-source voltage: 600V
  • Gate-source threshold voltage: 3.7V @ 310μA
  • Package: TO-251-3 Stub Leads, IPak
  • Operating temperature range: 150°C (TJ)
  • Compliance: halogen-free
  • EOL date: 2030

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Quantity Unit Price Ext. Price
4+ $16.3652 $65.4608
9+ $13.4280 $120.8520
14+ $13.0088 $182.1232
19+ $12.5883 $239.1777
24+ $12.1691 $292.0584
32+ $10.9101 $349.1232
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