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TK7A60W5,S5VX

Part No TK7A60W5,S5VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO-220SIS / Trans MOSFET N-CH Si 600V 7A 3-Pin(3+Tab) TO-220SIS Tube
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 350μA
Gate Charge (Qg) (Maximum) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 490pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 650 mOhm @ 3.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 777950-TK7A60W5,S5VX
Popularity Medium
Supply and Demand Status Limited
Family Name TK7A60W5
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK7A60W5,S5VX CAD Model

Description

The Toshiba Semiconductor and Storage TK7A60W5 is a N-channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Series: DTMOSIV
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Power Dissipation: 30W (Tc) (Maximum)
  • Continuous Drain Current: 7A (Ta) @ 25°C (Maximum)
  • Drain-Source Voltage: 600V
  • Gate-Source Threshold Voltage: 4.5V @ 350μA
  • Input Capacitance: 490pF @ 300V
  • Gate Charge: 16nC @ 10V
  • Rds On: 650 mOhm @ 3.5A, 10V (Maximum)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9003 $54.0180
140+ $0.7387 $103.4180
210+ $0.7156 $150.2760
290+ $0.6925 $200.8250
375+ $0.6695 $251.0625
500+ $0.6002 $300.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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