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Same model may have multiple batches, images only for reference.
TK7A65D Real Image
Same model may have multiple batches, images only for reference.

TK7A65D

Part No TK7A65D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO-220SIS
Datasheet
TK7A65D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 980 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212925-TK7A65D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK7A65D CAD Model

Description

The Toshiba Semiconductor and Storage TK7A65D is an N-channel MOSFET that comes in TO-220SIS case/package.

  • Maximum Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 24nC @ 10V
  • RoHS Compliant: This IC is RoHS compliant
  • Popularity: medium popularity
  • Supply and Demand Status: limited

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