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TK7S10N1Z,LQ

Name: TK7S10N1Z,LQ
Brand: Toshiba Semiconductor and Storage
SKU: 524432
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	TK7S10N1Z,LQ
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 7A DPAK
Datasheet	TK7S10N1Z,LQ Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 100μA
Max Gate Charge	7.1nC @ 10V
Max Input Capacitance	470pF @ 10V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	50W (Tc)
Maximum Rds On at Id,Vgs	48 mOhm @ 3.5A, 10V
Temperature Range - Operating	175°C (TJ)
Mounting	SMD (SMT)
Case / Package	DPAK+
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	1107466-TK7S10N1Z,LQ
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian TK7S10N1Z,LQ CAD Model

Alternative Products

Description

This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage.

Package: Reel - TR
Mounting: SMD (SMT)
Case/Package: DPAK+ / TO-252-3, DPak (2 Leads + Tab), SC-63
Polarity: N-Channel
Maximum Power Dissipation: 50W (Tc)
Product Category: Discrete Semiconductor Products
Popularity: Moderate
Risk of Counterfeit: Moderate
Supply and Demand Status: Sufficient

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