The Toshiba Semiconductor and Storage TK8A10K3,S5Q is an N-Channel MOSFET with a power dissipation (Max) of 18W (Tc) and a drain-source breakdown voltage of 100V.

• Power Dissipation (Max): 18W (Tc)
• Drain-Source Breakdown Voltage: 100V
• Mounting: Through Hole
• Package: TO-220SIS
• Technology: MOSFET
• Polarity: N-Channel
• Category: Discrete Semiconductor Products
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range - Operating: 150°C (TJ)
• Dimension: TO-220-3 Full Pack
• Continuous Drain Current @ 25°C: 8A (Ta)
• Gate-Source Threshold Voltage: 4V @ 1mA
• Max Gate Charge: 12.9nC @ 10V
• Max Input Capacitance: 530pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 120 mOhm @ 4A, 10V
• Supply and Demand Status: Balance