The Toshiba Semiconductor and Storage 217585-TK8P60W,RVQ is a Super Junction MOSFET with N-channel polarity.

• Component: This component is designed for discrete semiconductor products
• Maximum Power Dissipation: 80W (Tc)
• Maximum Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current at 25°C: 8A (Ta)
• Gate-Source Threshold Voltage: 3.7V @ 400μA
• Maximum Gate Charge: 18.5nC @ 10V
• Maximum Input Capacitance: 570pF @ 300V
• Maximum Rds On at Id, Vgs: 500 mOhm @ 4A, 10V
• Packaging: DPAK packaging
• Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supply and Demand Status: balanced