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TK9A65W,S5X

Part No TK9A65W,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 9.3A TO-220SIS / Trans MOSFET N-CH Si 650V 9.3A 3-Pin(3+Tab) TO-220SIS Magazine
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 350μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 700pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 500 mOhm @ 4.6A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 796852-TK9A65W,S5X
Popularity Medium
Supply and Demand Status Limited
Family Name TK9A65W
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK9A65W,S5X CAD Model

Description

The TK9A65W,S5X MOSFET product manufactured by Toshiba Semiconductor and Storage is a medium popularity DTMOSIV series.

  • Mounting Type: Through Hole
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Current-Continuous Drain (Id): 9.3A @ 25 degrees Celsius
  • Gate Charge (Qg): 20nC @ 10V
  • Power Dissipation (Maximum): 30W (Tc)
  • Collector Emitter Voltage (VCEO): 650V
  • Drain Source Voltage: 650V

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.2864 $58.1504
27+ $4.3370 $117.0990
42+ $4.2019 $176.4798
57+ $4.0668 $231.8076
74+ $3.9305 $290.8570
99+ $3.5239 $348.8661
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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