The TK9A90E is a 900V, 9A N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-voltage, high-efficiency power switching applications. Leveraging Toshiba's advanced process technology, it offers a good balance of low on-resistance and gate charge, contributing to reduced switching losses and improved overall system performance.

Applications

• High-Voltage Power Supplies
• AC-DC Converters
• Inverter Circuits
• Active PFC Circuits
• Industrial Motor Drives

Features

• VDSS: 900V
• ID: 9A
• RDS(on) (max): 1.35 Ω at VGS = 10V
• Gate Charge (Qg): 9.5 nC (typical)
• Output Capacitance (Coss): 46 pF (typical)
• Avalanche Energy Rated
• Pb-free terminal plating; RoHS compliant

Benefits

• High breakdown voltage allows for use in high voltage applications.
• Low gate charge contributes to reduced switching losses and higher efficiency.
• Robust design ensures reliable operation in demanding environments.
• Simplified thermal management due to low power dissipation.
• Environmentally friendly due to RoHS compliance.

Additional Details

The TK9A90E comes in a TO-220SIS package, designed for efficient heat dissipation. It is particularly well-suited for applications where high blocking voltage and efficient switching are critical requirements. The datasheet specifies parameters such as gate threshold voltage, drain current, and avalanche current. Proper gate drive circuitry is essential for optimal performance. The device's robust construction and high avalanche energy rating contribute to long-term reliability. The TK9A90E is suitable for use in both hard-switching and resonant-switching topologies. The compact package facilitates ease of assembly and integration into various power electronic systems. Careful consideration of thermal management is recommended to maximize performance and lifespan. The high voltage capability makes it a suitable choice for applications involving renewable energy, such as solar inverters.