The TLBE1100B is a bi-directional TVS (Transient Voltage Suppressor) diode manufactured by Toshiba Semiconductor and Storage. It is designed to protect sensitive electronic components from voltage transients induced by lightning, electrostatic discharge (ESD), and other transient voltage events. This device features a compact package and fast response time, making it suitable for a wide range of applications.

Applications

• USB Interfaces: Protects USB ports and related circuitry from ESD and voltage surges.
• HDMI Interfaces: Safeguards HDMI ports and associated components from transient voltage events.
• Ethernet Ports: Protects Ethernet interfaces and connected devices from lightning-induced surges and ESD.
• Microcontroller I/O Ports: Provides protection for microcontroller I/O pins against ESD and transient voltages.
• Power Supplies: Protects power supply inputs from voltage transients, ensuring stable operation.

Features

• Bi-Directional Protection: Provides symmetrical voltage protection, suitable for AC and DC applications.
• Low Clamping Voltage: Limits the voltage across the protected device during a transient event.
• Fast Response Time: Quickly clamps transient voltages to protect sensitive components.
• Small Package Size: Allows for easy integration into space-constrained designs.
• Low Leakage Current: Minimizes power consumption in normal operation.

Benefits

• Enhanced ESD Protection: Protects electronic devices from damage due to electrostatic discharge.
• Improved Surge Immunity: Increases the ability of electronic devices to withstand voltage surges.
• Increased System Reliability: Protects sensitive components from voltage transients, improving overall system reliability.
• Simplified Circuit Design: Easy to integrate into existing circuit designs.
• Cost-Effective Solution: Provides a cost-effective means of protecting electronic devices from transient voltage events.

Additional Details

The TLBE1100B TVS diode features a silicon-based construction designed for fast response and reliable performance. Key electrical characteristics include reverse standoff voltage, clamping voltage, peak pulse current, and capacitance. These parameters should be carefully considered when selecting the appropriate TVS diode for a specific application. Consult the Toshiba datasheet for detailed specifications and performance curves.

This device is compliant with industry standards for ESD and surge protection, ensuring that it meets the requirements for various electronic applications. It is typically surface-mounted for ease of assembly and automated manufacturing processes.