The TMM2016BP-10 is a high-speed static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. Organized as 131,072 words by 8 bits (1 Mbit), it is designed for applications demanding fast access times and low power consumption.

Applications

• Cache memory in microprocessors and microcontrollers
• Buffer memory for high-speed data acquisition
• Control memory in embedded systems and industrial controllers
• Working memory in digital signal processing (DSP) systems
• High-speed storage in networking equipment

Features

• Organization: 131,072 words x 8 bits (1 Mbit)
• Access Time: 10 ns
• Supply Voltage: 5V
• Operating Current: Low operating current for efficient power use
• Standby Current: Very low standby current for battery-backed applications
• Package: DIP or SOIC (Specific package type requires verification from the datasheet)
• Operating Temperature: -40°C to +85°C (Industrial temperature range)

Benefits

• High Speed: 10 ns access time ensures quick data retrieval and processing.
• Low Power: Reduced power consumption extends battery life in portable devices.
• Large Capacity: 1 Mbit storage capacity is ample for many data and program storage requirements.
• Ease of Use: Standard SRAM interface simplifies integration into existing systems.
• Reliability: Designed for robust performance in harsh operating environments.

Additional Details

The TMM2016BP-10 SRAM provides a high-speed, low-power memory solution with a large storage capacity. It is suitable for applications requiring rapid data access and processing. The available package options (DIP and SOIC) allow for flexible mounting on PCBs. For detailed specifications including power consumption at various frequencies, package dimensions, and pinout information, always consult the official Toshiba datasheet.

Key Specifications:

• Memory Size: 1 Mbit
• Organization: 131,072 words x 8 bits
• Access Time: 10 ns
• Supply Voltage: 5 V ± 10%
• Operating Temperature: -40°C to +85°C
• Data Retention Voltage: Typically 2 V