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TPC6012

Part No TPC6012
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 20V 6A 6-Pin VS T/R  / MOSFET N-CH 20V 6A VS6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 9nC @ 5V
Max Input Capacitance 630pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056750-TPC6012
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name TPC6012
Introduction Date August 26, 2009
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian TPC6012 CAD Model

Description

The TPC6012 MOSFET is a high-quality semiconductor device that is designed for use in various applications.

  • Polarity: N-channel
  • Power Dissipation: 700mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id, Vgs: 20 mOhm @ 3A, 4.5V
  • Gate-Source Threshold Voltage: 1.2V @ 200μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 9nC @ 5V
  • Mounting Type: surface mount device (SMD)
  • Case/Package: VS-6 (2.9x2.8)

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1964 $57.9380
715+ $0.1617 $115.6155
1,115+ $0.1559 $173.8285
1,530+ $0.1513 $231.4890
1,970+ $0.1467 $288.9990
2,635+ $0.1317 $347.0295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,600 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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