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Same model may have multiple batches, images only for reference.
TPC6104-TE85L Real Image
Same model may have multiple batches, images only for reference.

TPC6104-TE85L

Part No TPC6104-TE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A VS6 2-3T1A
Datasheet
TPC6104-TE85L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 1430pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 2.8A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056758-TPC6104-TE85L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6104-TE85L CAD Model

Description

The TPC6104-TE85L is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and demand status: balanced
  • Win Source Part Number: 056758-TPC6104-TE85L
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current @ 25°C: 5.5A
  • Gate-Source Threshold Voltage: 1.2V @ 200μA
  • Maximum Gate Charge: 19nC @ 5V
  • Maximum Input Capacitance: 1430pF @ 10V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 2.8A, 4.5V
  • Package: VS-6 (2.9x2.8)
  • Dimensions: SOT-23-6 Thin, TSOT-23-6

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