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TPC6602

Part No TPC6602
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (T)
Description TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 375480-TPC6602
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6602 CAD Model

Description

The TPC6602 is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. Designed for high-efficiency power management applications, it features a low on-resistance (RDS(on)) to minimize conduction losses and enhance overall system performance. This MOSFET is suitable for a variety of switching applications, offering a balance of performance and reliability.

Applications:

  • DC-DC Converters: Used in voltage regulation and power conversion circuits, such as buck and boost converters.
  • Load Switching: For efficient and controlled power delivery to various loads.
  • Power Management in Portable Devices: Suitable for smartphones, tablets, and laptops.
  • Motor Control: Applied in circuits for controlling the speed and torque of small motors.
  • Battery Management Systems: For charging and discharging control in battery-powered devices.

Features:

  • Low On-Resistance (RDS(on)): Reduces power loss and enhances efficiency.
  • Fast Switching Speed: Enables efficient high-frequency operation.
  • Logic Level Gate Drive: Facilitates easy interfacing with microcontrollers and logic circuits.
  • Surface Mount Package: Suitable for automated assembly and compact designs.
  • High Avalanche Energy: Provides robustness against voltage spikes and inductive loads.

Benefits:

  • Increased Efficiency: Low RDS(on) minimizes heat generation and improves overall system efficiency.
  • Simplified Circuit Design: Logic-level gate drive simplifies interfacing with control circuits.
  • Compact Design: Surface mount package enables space-saving designs.
  • Improved Reliability: High avalanche energy rating enhances device reliability under transient conditions.
  • Reduced Power Consumption: Optimized for low-voltage operation, minimizing power usage.

Additional Details:

The TPC6602 typically exhibits an RDS(on) of around 6.5 mΩ at a gate-source voltage (VGS) of 4.5V. Its gate threshold voltage (VGS(th)) is generally between 1V and 2.5V, allowing for direct control from standard logic levels. The maximum drain current (ID) can be up to 25A, depending on the specific operating conditions and the effectiveness of the heat sinking. It is commonly available in surface-mount packages such as SOP-8, which is designed for efficient thermal dissipation and ease of integration in modern electronic designs. The operating temperature range is typically from -55°C to +150°C, making it suitable for a wide range of environments. The TPC6602's combination of high performance and robust design make it a dependable choice for diverse power management applications.

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