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Same model may have multiple batches, images only for reference.
TPC8014-TE12L Real Image
Same model may have multiple batches, images only for reference.

TPC8014-TE12L

Part No TPC8014-TE12L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A SOP8 2-6J1B
Datasheet
TPC8014-TE12L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1860pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056774-TPC8014-TE12L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8014-TE12L CAD Model

Description

The Toshiba Semiconductor and Storage TPC8014-TE12L is an N-channel MOSFET transistor designed for use in various power applications.

  • Power Dissipation: 1W
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Status: Obsolete (EOL)
  • Temperature Range: 150°C
  • Supply and Demand Status: Balanced

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