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TPC8037-H(TE12L

Part No TPC8037-H(TE12L
Manufacturer Toshiba Semiconductor and Storage
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1210
Reference case SOP8
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 727969-TPC8037-H(TE12L
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8037-H(TE12L CAD Model

Description

The TPC8037-H(TE12L is an N-channel Power MOSFET from Toshiba Semiconductor and Storage. It is designed for load switching and power management applications, offering low on-resistance and high-speed switching capabilities, particularly for use in DC-DC converters and motor control.

Applications

  • DC-DC Converters: Efficient switching element in step-up, step-down, and inverting DC-DC converters.
  • Load Switching: Used for turning power on and off to various loads in electronic devices.
  • Power Management: Suitable for power management circuits in portable devices.
  • Motor Control: Used in low-power motor control applications.
  • LED Lighting: Used in LED drivers for efficient switching.

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, increasing efficiency.
  • High-Speed Switching: Enables efficient operation at high frequencies.
  • Small Package Size (SOP-8): Suitable for space-constrained applications.
  • Low Gate Charge (Qg): Reduces switching losses.
  • Lead-Free and RoHS Compliant: Meets environmental regulations.
  • Trench Gate Structure: Offers excellent noise immunity and fast switching speeds.

Benefits

  • Improved Efficiency: Low on-resistance reduces power dissipation, resulting in higher efficiency.
  • Compact Design: Small package size enables smaller and lighter electronic devices.
  • Reduced Heat Dissipation: Lower on-resistance minimizes heat generation.
  • Fast Switching: Enables efficient operation in high-frequency circuits.
  • Longer Battery Life: Reduced power consumption contributes to longer battery life in portable devices.

Technical Specifications (Typical Values):

  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current (ID): 8A
  • On-Resistance (RDS(on)) @ VGS=10V: 11 mΩ (milliohms)
  • Total Gate Charge (Qg): 10 nC (nanoCoulombs)
  • Power Dissipation (PD): 2W
  • Operating Junction Temperature (Tj): 150°C
  • Package: SOP-8

The TPC8037-H(TE12L is an efficient and compact N-channel Power MOSFET well-suited for load switching and power management applications, especially in DC-DC converters and portable devices. Its low on-resistance and fast switching capabilities contribute to improved efficiency and reduced heat dissipation. Designers should refer to the Toshiba Semiconductor datasheet for detailed specifications and application guidelines.

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