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TPC8038-H(TE12L,Q)

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Part No	TPC8038-H(TE12L,Q)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 12A SOP8 2-6J1B
Datasheet	TPC8038-H(TE12L,Q) Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	12A (Ta)
Gate-Source Threshold Voltage	2.5V @ 1mA
Max Gate Charge	21nC @ 10V
Max Input Capacitance	2150pF @ 10V
Maximum Rds On at Id,Vgs	11.4 mOhm @ 6A, 10V
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SOP (5.5x6.0)
Dimension	8-SOIC (0.173", 4.40mm Width)
Win Source Part Number	1111095-TPC8038-H(TE12L,Q)
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian TPC8038-H(TE12L,Q) CAD Model

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Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel, 30V drain-source breakdown voltage, 12A continuous drain current @ 25°C, and 8-SOP (5.5x6.0) case/package.

Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 2150pF @ 10V
Maximum Rds On @ Id,Vgs: 11.4 mOhm @ 6A, 10V
Supply and Demand Status: sufficient

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TPC8038-H(TE12L,Q)

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