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Same model may have multiple batches, images only for reference.
TPC8062-H Real Image
Same model may have multiple batches, images only for reference.

TPC8062-H

Part No TPC8062-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 8SOP
Datasheet
TPC8062-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 300μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 2900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 375563-TPC8062-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8062-H CAD Model

Description

The TPC8062-H is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 1W (Ta)
  • Continuous Drain Current: 18A (Ta) @ 25°C
  • Maximum Rds On at Id,Vgs: 5.8 mOhm @ 9A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 34nC @ 10V
  • Maximum Input Capacitance: 2900pF @ 10V
  • Package: 8-SOP package
  • Temperature Range: 150°C (TJ)
  • Status: active
  • Popularity: medium
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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