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TPC8084,LQ

Part No TPC8084,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840860-TPC8084,LQ
Ultra Librarian 3D Model Ultra Librarian TPC8084,LQ CAD Model

Description

The TPC8084 is a sophisticated N-channel power MOSFET from Toshiba Semiconductor and Storage, designed for high-efficiency switching applications. This device boasts a low drain-source on-resistance, contributing to reduced power loss and improved thermal performance. The 'LQ' suffix indicates a specific packaging and tape/reel option.

Applications

  • DC-DC converters: Used in voltage regulation modules (VRMs) for efficient power conversion.
  • Load switches: Provides effective control of power distribution in various systems.
  • Power management circuits: Implemented in portable devices, servers, and industrial equipment for optimized power usage.
  • Motor control applications: Employed in controlling small DC motors.

Features

  • Low drain-source on-resistance (RDS(on)): Minimizes conduction losses, enhancing efficiency.
  • High-speed switching: Enables rapid switching transitions, reducing switching losses.
  • Low gate charge (Qg): Reduces the drive power requirements, simplifying the driving circuitry.
  • Avalanche-rated: Offers robustness against transient voltage spikes.
  • RoHS compliant: Adheres to environmental standards for lead-free manufacturing.

Benefits

  • Improved energy efficiency: Low RDS(on) reduces power dissipation, leading to energy savings.
  • Enhanced thermal performance: Lower power loss results in reduced heat generation, improving system reliability.
  • Simplified driving circuitry: Low gate charge reduces the complexity and cost of the gate drive circuit.
  • Increased system reliability: Avalanche rating protects the MOSFET from voltage transients.
  • Environmentally friendly: RoHS compliance ensures adherence to environmental regulations.

Technical Specifications: While specific values vary based on batch and testing conditions, typical specifications include a drain-source voltage (VDS) rating of around 30V, a continuous drain current (ID) rating of approximately 8A, and an RDS(on) of around 12 mΩ at a gate-source voltage (VGS) of 10V. Consult the official Toshiba datasheet for precise values.

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