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Same model may have multiple batches, images only for reference.
TPC8111(TE12L,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8111(TE12L,Q,M)

Part No TPC8111(TE12L,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A SOP8 2-6J1B
Datasheet
TPC8111(TE12L,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 5710pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 1111101-TPC8111(TE12L,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8111(TE12L,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-Channel device that has a drain-source breakdown voltage of 30V and a continuous drain current of 11A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C
  • Maximum Rds On: 12 mOhm @ 5.5A and 10V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 107nC @ 10V
  • Package: 8-SOP
  • Dimension: 0.173"
  • Width: 4.40mm
  • Operating Temperature: Up to 150°C
  • Power Dissipation: 1W (Ta)
  • Mounting Technology: SMD (SMT)
  • Drive Voltage: 4V (max Rds On) and 10V (min Rds On)

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