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Same model may have multiple batches, images only for reference.
TPC8120(TE12L,Q,M)
Same model may have multiple batches, images only for reference.

TPC8120(TE12L,Q,M)

Part No TPC8120(TE12L,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 30V 18A 8-PIN Sop T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Capacitance 7.42 nF
Case / Package SOP
Continuous Drain Current (ID) 18 A
Drain to Source Voltage (Vdss) 30 V
Fall Time 275 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 7.42 nF
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 8
Packaging Tape & Reel (TR)
Power Dissipation 1.9 W
Radiation Hardening No
Rds On Max 3.2 mΩ
Rise Time 10 ns
RoHS Compliant
Win Source Part Number 1214751-TPC8120(TE12L,Q,M)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8120(TE12L,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage 1214751-TPC8120(TE12L,Q,M) is a transistor product with a packaging of tape & reel (TR).

  • Manufacturer: Toshiba Semiconductor and Storage
  • Packaging: Tape & Reel (TR)
  • Capacitance: 7.42 nF
  • Drain to Source Voltage (Vdss): 30 V
  • Number of Elements: 1
  • Input Capacitance: 7.42 nF
  • Power Dissipation: 1.9 W
  • Number of Pins: 8
  • Rise Time: 10 ns
  • Fall Time: 275 ns
  • Supply and Demand Status: Limited
  • Operating Temperature Range: -55 °C to 150 °C
  • Continuous Drain Current (ID): 18 A
  • Gate to Source Voltage (Vgs): 20 V
  • Rds On Max: 3.2 mΩ

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