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TPC8126,LQ(CM

Part No TPC8126,LQ(CM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A 8SOP / P-Channel 30 V 11A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)
Base Product Number TPC8126
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TPC8126LQ(CM,TPC8126LQCM
Standard Package 3,000
Win Source Part Number 981652-TPC8126,LQ(CM
Ultra Librarian 3D Model Ultra Librarian TPC8126,LQ(CM CAD Model

Description

The TPC8126,LQ(CM) is a P-Channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Series: U-MOSVI
  • Win Source Part Number: 981652
  • Category: Discrete semiconductor products, Transistors - FETs, MOSFETs - Single
  • Package: Tape and reel (TR)
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 11A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
  • Temperature Range: 150°C (TJ)
  • Status: Obsolete

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