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TPC8126

Part No TPC8126
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A 8SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 500μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 2400pF @ 10V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056800-TPC8126
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8126 CAD Model

Description

The Toshiba Semiconductor and Storage 056800-TPC8126 is a P-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 11A (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A (Ta)
  • Rds On @ Id,Vgs: 10 mOhm @ 5.5A, 10V
  • Maximum Gate-Source Voltage: +20V, -25V
  • Gate-Source Threshold Voltage: 2V @ 500μA
  • Gate Charge: 56nC @ 10V
  • Input Capacitance: 2400pF @ 10V
  • Package: 8-SOP (5.5x6.0)
  • Application: perfect for use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4308 $58.1580
330+ $0.3534 $116.6220
510+ $0.3419 $174.3690
700+ $0.3315 $232.0500
905+ $0.3199 $289.5095
1,205+ $0.2876 $346.5580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,215 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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