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Same model may have multiple batches, images only for reference.
TPC8134,LQ(S Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8134,LQ(S

Part No TPC8134,LQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 5A 8SOP
Datasheet
TPC8134,LQ(S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 890pF @ 10V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 52 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1086683-TPC8134,LQ(S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8134,LQ(S CAD Model

Description

The TPC8134,LQ(S) is a P-channel MOSFET with a maximum power dissipation of 1W (Ta), manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 1W (Ta) (Max)
  • Gate-Source Voltage: +20V (Max), -25V (Max)
  • Rds On at Id,Vgs: 52 mOhm @ 2.5A, 10V (Max)
  • Package: 8-SOP

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Quantity Unit Price Ext. Price
65+ $0.9516 $61.8540
150+ $0.7809 $117.1350
230+ $0.7564 $173.9720
320+ $0.7320 $234.2400
410+ $0.7077 $290.1570
550+ $0.6345 $348.9750
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