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Same model may have multiple batches, images only for reference.
TPC8207(TE12L) Real Image
Same model may have multiple batches, images only for reference.

TPC8207(TE12L)

Part No TPC8207(TE12L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6A 8-SOP
Datasheet
TPC8207(TE12L) Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 20 mOhm @ 4.8A, 4V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2010pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 096845-TPC8207(TE12L)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8207(TE12L) CAD Model

Description

The Toshiba Semiconductor and Storage 096845-TPC8207(TE12L) is a 2 N-Channel (Dual) FET that features a logic level gate.

  • Power Dissipation: 450mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6A
  • Gate-Source Threshold Voltage: 1.2V @ 200μA
  • Gate Charge: 22nC @ 5V
  • Input Capacitance: 2010pF @ 10V
  • Rds On @ Id,Vgs: 20 mOhm @ 4.8A, 4V
  • Packaging: Digi-Reel
  • Mounting: SMD (SMT)
  • Application: suitable choice for use in discrete semiconductor products
  • Operating Temperature: up to 150°C (TJ)

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Quantity Unit Price Ext. Price
150+ $0.3927 $58.9050
360+ $0.3222 $115.9920
560+ $0.3119 $174.6640
770+ $0.3015 $232.1550
990+ $0.2922 $289.2780
1,325+ $0.2622 $347.4150
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