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Same model may have multiple batches, images only for reference.
TPC8208(TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8208(TE12L,Q)

Part No TPC8208(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5A 8-SOP
Datasheet
TPC8208(TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.5A, 4V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 9.5nC @ 5V
Max Input Capacitance 780pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 103310-TPC8208(TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8208(TE12L,Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2 N-Channel (Dual) Logic Level Gate FET is a discrete semiconductor product that is used for various applications.

  • Power Dissipation: 450mW
  • Continuous Drain Current @ 25°C: 5A
  • Gate-Source Threshold Voltage: 1.2V @ 200μA
  • Gate Charge: 9.5nC @ 5V
  • Rds On @ Id,Vgs: 50 mOhm @ 2.5A, 4V
  • Package: Digi-Reel
  • Popularity: medium
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,329 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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