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Same model may have multiple batches, images only for reference.
TPC8211 Real Image
Same model may have multiple batches, images only for reference.

TPC8211

Part No TPC8211
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.5A SOP8
Datasheet
TPC8211 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.5A
Maximum Rds On at Id,Vgs 36 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1250pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 056439-TPC8211
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8211 CAD Model

Description

The Toshiba Semiconductor and Storage 056439-TPC8211 is a dual N-channel FET that features a logic level gate.

  • Mounting: surface-mount technology (SMT)
  • Package: reel
  • Category: discrete semiconductor products
  • Status: obsolete (EOL)
  • Operating Temperature: 150°C (TJ)
  • Power Dissipation: 450mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.5A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Gate Charge: 25nC @ 10V
  • Input Capacitance: 1250pF @ 10V
  • Rds On @ Id,Vgs: 36 mOhm @ 3A, 10V
  • Supply and Demand: sufficient

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Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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Availability: 1,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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