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Same model may have multiple batches, images only for reference.
TPC8212-H(TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8212-H(TE12L,Q)

Part No TPC8212-H(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A SOP8
Datasheet
TPC8212-H(TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 21 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 840pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 056805-TPC8212-H(TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8212-H(TE12L,Q) CAD Model

Description

The Toshiba TPC8212-H(TE12L,Q is an electronic component that is designed to be used in an array of electronic devices, such as computers, televisions, and other consumer electronics.

  • Status: obsolete (EOL)
  • Supply and Demand: balanced
  • Type: dual N-channel logic level gate FET
  • Power Dissipation: 450mW
  • Manufacturer: Toshiba Semiconductor and Storage
  • Category: discrete semiconductor product

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,028 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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