The Toshiba Semiconductor and Storage 213276-TPC8223-H is a 2 N-Channel (Dual) FET with a logic level gate.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 9A @ 25°C
• Gate-Source Threshold Voltage: 2.3V @ 100μA
• Maximum Gate Charge: 17nC @ 10V
• Maximum Input Capacitance: 1190pF @ 10V
• Maximum Rds On: 17 mOhm @ 4.5A, 10V
• Case/Package: 8-SOP
• Operating Temperature Range: 150°C (TJ)
• Maximum Power: 450mW
• Toshiba Semiconductor and Storage 213276-TPC8223-H: is a reliable and efficient FET that is suitable for various applications in the electronic industry