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TPC8227-H,LQ

Part No TPC8227-H,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Arrays
Description TPC8227-H,LQ
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI-H
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5.1A
Rds On (Max) @ Id, Vgs 33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
Power - Max 1.5W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number TPC8227
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1002971-TPC8227-H,LQ
Ultra Librarian 3D Model Ultra Librarian TPC8227-H,LQ CAD Model

Description

The 1002971-TPC8227-H,LQ is a dual N-channel MOSFET array in an 8-SOIC package.

  • Category: Discrete Semiconductor Products
  • Type: Transistors
  • Configuration: Dual N-Channel MOSFET
  • Drain-to-Source Voltage: 40V
  • Continuous Drain Current: 5.1A
  • On-Resistance: 33mΩ @ 2.6A, 10V
  • Gate Threshold Voltage: 2.3V @ 100μA
  • Power Dissipation: 1.5W (max)
  • Operating Temperature: Up to 150°C
  • Mounting: Surface Mountable
  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Status: Active
  • MSL Level: 1 (unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,988 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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