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TPC8407,LQ(S Toshiba Semiconductor and Storage TPC8407,LQ(S real image
Same model may have multiple batches, images only for reference.
TPC8407,LQ(S Toshiba Semiconductor and Storage TPC8407,LQ(S real image
TPC8407,LQ(S Toshiba Semiconductor and Storage TPC8407,LQ(S real image
Same model may have multiple batches, images only for reference.

TPC8407,LQ(S

Part No TPC8407,LQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH Si 30V 9A/7.4A 8-Pin SOP T/R / MOSFET N/P-CH 30V 9A/7.4A 8SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A, 7.4A
Maximum Rds On at Id,Vgs 17 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1190pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1111108-TPC8407,LQ(S
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TPC8407
Introduction Date March 11, 2011
ECCN EAR99
Country of Origin China
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian TPC8407,LQ(S CAD Model

Description

The Toshiba Semiconductor and Storage TPC8407,LQ(S is a N and P-channel FET type component that has a high popularity in the market. in the open market.

  • Maximum Power Dissipation: 450mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A, 7.4A @ 25°C
  • Maximum Rds On: 17 mOhm @ 4.5A, 10V

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