Its supply and demand status is balanced.

• This Product: is manufactured by Toshiba Semiconductor and Storage and belongs to the categories of Discrete Semiconductor Products
• It Is: a MOSFET technology with N-Channel Polarity and has a power dissipation (Max) of 1.6W (Ta), 45W (Tc)
• It Is Mounted Using: SMD (SMT) technology and has a packaging of Reel - TR
• Temperature Range: for operating this product is 150°C (TJ)
• It Has: a dimension of 8-PowerVDFN and a drain-source breakdown voltage of 30V
• Continuous Drain Current: @ 25°C is 27A (Ta)
• Gate-Source Threshold Voltage: 2.3V @ 1mA
• Maximum Gate Charge: 24nC @ 10V
• Maximum Input Capacitance: 1395pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On: 9 mOhm @ 14A, 10V
• The Product Specifications: are not enough to provide a detailed description