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Same model may have multiple batches, images only for reference.
TPCA8036-H(TE12LQ)
Same model may have multiple batches, images only for reference.

TPCA8036-H(TE12LQ)

Part No TPCA8036-H(TE12LQ)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A 8SOIC ADV
Datasheet
TPCA8036-H(TE12LQ) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 500μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 4600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 19A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 213280-TPCA8036-H(TE12LQ)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8036-H(TE12LQ) CAD Model

Description

The Toshiba Semiconductor and Storage TPCA8036-H(TE12LQ) is an N-channel MOSFET that is designed for discrete semiconductor applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Ta) @ 25°C: 38A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 4.2 mOhm @ 19A, 10V
  • Case/Package: 8-SOP Advance (5x5)
  • Packaging: Reel - TR
  • Power Dissipation: 1.6W (Ta), 45W (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 500μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Input Capacitance: 4600pF @ 10V

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