The Toshiba Semiconductor and Storage TPCA8062-H,LQ(CM) is an N-channel MOSFET that is designed for use in a range of electronic applications.

• Channel Type: N-channel
• Mounting: SMD (SMT)
• Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
• Drive Voltage: 4.5V, 10V (Max Rds on, min Rds on)
• Temperature Range: 150°C (TJ)
• Case/Package: 8-SOP Advance (5x5)
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 28A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 2.3V @ 300μA
• Max Gate Charge: 34nC @ 10V
• Max Input Capacitance: 2900pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds on: 5.6 mOhm @ 14A, 10V
• Status: Active
• Popularity: Medium