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Same model may have multiple batches, images only for reference.
TPCA8062-H Real Image
Same model may have multiple batches, images only for reference.

TPCA8062-H

Part No TPCA8062-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 28A 8SOP-ADV
Datasheet
TPCA8062-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 300μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 2900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 14A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056828-TPCA8062-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8062-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel transistor that operates with a drain-source breakdown voltage of 30V and a continuous drain current of 28A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 28A
  • Power Dissipation: 1.6W (Ta) and 42W (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 300μA
  • Max Rds On @ Id,Vgs: 5.6 mOhm @ 14A, 10V
  • Maximum Input Capacitance @ 10V: 2900pF
  • Maximum Gate-Source Voltage: ±20V
  • Package: 8-SOP Advance (5x5)
  • Mounting: SMD (SMT)
  • Category: Discrete semiconductor products

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