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Same model may have multiple batches, images only for reference.
TPCA8102(TE12L,Q,M
Same model may have multiple batches, images only for reference.

TPCA8102(TE12L,Q,M

Part No TPCA8102(TE12L,Q,M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A SOP-8 ADV
Datasheet
TPCA8102(TE12L,Q,M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 109nC @ 10V
Max Input Capacitance 4600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111125-TPCA8102(TE12L,Q,M
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8102(TE12L,Q,M CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-Channel power MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 40A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 40A
  • Maximum Rds On: 6 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Power Dissipation: 1.6W (Ta), 45W (Tc)
  • Temperature Range: 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 4600pF @ 10V
  • Mounting: 8-SOP Advance (5x5) package

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