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Same model may have multiple batches, images only for reference.
TPCA8A04-H(TE12L,Q
Same model may have multiple batches, images only for reference.

TPCA8A04-H(TE12L,Q

Part No TPCA8A04-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 44A 8SOP ADV
Datasheet
TPCA8A04-H(TE12L,Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 44A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 5700pF @ 10V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 3.2 mOhm @ 22A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111128-TPCA8A04-H(TE12L,Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8A04-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCA8A04-H(TE12L,Q) is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 44A @ 25°C
  • Package: 8-SOP Advance (5x5)
  • Mounting: Reel
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 59nC @ 10V
  • Maximum Rds On @ Id,Vgs: 3.2 mOhm @ 22A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
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27+ $4.4202 $119.3454
41+ $4.2816 $175.5456
56+ $4.1430 $232.0080
73+ $4.0055 $292.4015
97+ $3.5909 $348.3173
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Availability: 3,000 pieces
MOQ: 11 pcs
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