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Same model may have multiple batches, images only for reference.
TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCC8002-H(TE12L,Q

Part No TPCC8002-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A 8TSON / Trans MOSFET N-CH Si 30V 22A 8-Pin TSON EP Advance T/R
Datasheet
TPCC8002-H(TE12L,Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSV-H
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 700mW (Ta), 30W (Tc)
Rds On (Maximum) @ Id, Vgs 8.3 mOhm @ 11A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSON
Package 8-VDFN Exposed Pad
Win Source Part Number 797821-TPCC8002-H(TE12L,Q
Popularity Medium
Supply and Demand Status Limited
Family Name TPCC8002-H
Introduction Date July 15, 2009
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian TPCC8002-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCC8002-H(TE12L,Q is a MOSFET with a current rating of 22A. Toshiba Semiconductor and Storage

  • Current Rating: 22A
  • Package: 8-VDFN Exposed Pad
  • Mounting: SMD
  • Voltage Rating: 30V
  • Power Dissipation (Maximum) (Ta): 700mW
  • Power Dissipation (Maximum) (Tc): 30W
  • Family: TPCC8002-H
  • Applications: Discrete Semiconductor Products
  • Gate Charge: 27nC @ 10V
  • Input Capacitance: 2500pF @ 10V
  • Estimated EOL Date:
  • Alternative Parts: Si7112DN-T1-E3, SI7112DN-T1-GE3, SQS404EN-T1-GE3

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