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TPCC8074

Part No TPCC8074
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Description MOSFETs Silicon N-Channel MOS (U-MOS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1271933-TPCC8074
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCC8074 CAD Model

Description

The TPCC8074 is an N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency power switching applications. This MOSFET features a low drain-source on-resistance (RDS(on)) and a high-speed switching capability, making it suitable for use in DC-DC converters, motor control, and other power management circuits.

Applications:

  • DC-DC Converters: Used in DC-DC converters for efficient power conversion.
  • Motor Control: Employed in motor control circuits for switching and controlling motor speed.
  • Power Management Circuits: Used in power management circuits for switching and regulating power.
  • Load Switches: Used as load switches to control power to various loads.
  • Backlight Inverters: Can be found in backlight inverters for LCD displays.

Features:

  • N-Channel MOSFET: N-channel enhancement mode MOSFET.
  • Low RDS(on): Low drain-source on-resistance minimizes power losses.
  • High-Speed Switching: Fast switching speed for efficient operation.
  • Low Gate Charge: Low gate charge reduces switching losses.
  • High Avalanche Capability: High avalanche ruggedness for reliable operation.
  • Surface Mount Package: Available in a surface mount package for easy assembly.
  • Lead-Free: Compliant with RoHS standards for environmental protection.

Benefits:

  • Increased Efficiency: Low RDS(on) minimizes power losses and improves efficiency.
  • Reduced Heat Dissipation: Lower power losses reduce heat dissipation.
  • Faster Switching: High-speed switching enables faster operation.
  • Compact Design: Surface mount package saves board space.
  • Improved Reliability: High avalanche capability ensures reliable operation.

Technical Specifications (General):

  • Drain-Source Voltage (VDS): Typically 30V
  • Gate-Source Voltage (VGS): Typically ±20V
  • Drain Current (ID): Typically 7A
  • RDS(on): Typically 25 mΩ at VGS = 10V
  • Gate Charge (Qg): Typically 5 nC
  • Operating Temperature: -55°C to +150°C
  • Package: SOP-8

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