The Toshiba Semiconductor and Storage 840886-TPCC8093,L1Q is a single MOSFET transistor in an 8-PowerVDFN package.

• Series: U-MOSVII
• Application: discrete semiconductor products, specifically in FET applications
• Drain to Source Voltage: 20V
• Continuous Drain Current: 21A @ 25°C
• Rds On: 5.8mOhm @ 10.5A and 4.5V
• Gate Threshold Voltage: 1.2V @ 500μA
• Maximum Power Dissipation: 1.9W @ 30W
• Mounting Type: surface mount
• Status: obsolete

It belongs to the U-MOSVII series and is designed for use in discrete semiconductor products, specifically in FET applications. With a drain to source voltage of 20V, it can handle moderate voltage levels. The continuous drain current is 21A at 25°C, allowing for high current flow. It has a low Rds On of 5.8mOhm at 10.5A and 4.5V, ensuring efficient operation. The gate threshold voltage is 1.2V at 500μA. The maximum power dissipation is 1.9W at 30W, enabling it to handle high power levels. With a surface mount mounting type, it can be easily integrated into circuit boards. The Toshiba Semiconductor and Storage 840886-TPCC8093,L1Q is an obsolete product in the market, suitable for various applications.