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TPCC8137

Part No TPCC8137
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1414+
Reference case SOP8
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 757620-TPCC8137
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCC8137 CAD Model

Description

The TPCC8137 is a P-channel power MOSFET from Toshiba Semiconductor and Storage. It's designed for load switching, DC-DC conversion and other power management applications, particularly where a P-channel device is advantageous due to its drive characteristics. The device offers a low on-resistance for efficient power handling.

Applications:

  • Load Switching
  • DC-DC Converters
  • Power Management Circuits
  • Battery Management Systems
  • Reverse Polarity Protection
  • High-Side Switching
  • Motor Control

Features:

  • P-Channel MOSFET: Offers complementary switching characteristics to N-channel MOSFETs.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
  • High Drain Current (ID): Capable of handling substantial current loads.
  • Low Gate Charge (Qg): Reduces switching losses.
  • Avalanche Capability: Withstands transient voltage spikes.
  • Surface Mount Package: Typically available in small surface-mount packages (e.g., SOP-8) for space-saving PCB assembly.
  • Lead-Free and RoHS Compliant: Environmentally friendly construction.

Benefits:

  • Efficient Switching: Low RDS(on) minimizes power dissipation.
  • Simplified Drive Circuitry: P-channel MOSFETs can be easier to drive in some configurations compared to N-channel.
  • Compact Design: Small package allows for high-density board layouts.
  • Robust Performance: Avalanche capability enhances reliability.
  • Lower Power Consumption: Optimized for efficient power handling.

Additional Details:

The TPCC8137 generally has a drain-source voltage (VDS) rating suitable for common power applications, such as -30V. The drain current rating (ID) is a key parameter depending on the target load. The on-resistance (RDS(on)) is specified at a certain gate-source voltage (VGS). Proper gate drive voltage is critical for achieving the specified RDS(on) and efficient switching. Adequate heat sinking should be considered, especially when operating at high current levels. Refer to Toshiba Semiconductor and Storage's official datasheet for precise electrical characteristics, thermal resistance, and safe operating area (SOA). The datasheet provides information about static and dynamic characteristics, which are essential for proper circuit design and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7819 $58.6425
185+ $0.6416 $118.6960
280+ $0.6216 $174.0480
385+ $0.6015 $231.5775
500+ $0.5816 $290.8000
665+ $0.5214 $346.7310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,100 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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