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Same model may have multiple batches, images only for reference.
TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCC8A01-H(TE12LQM

Part No TPCC8A01-H(TE12LQM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A SBD 8TSON
Datasheet
TPCC8A01-H(TE12LQM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 9.9 mOhm @ 10.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON
Dimension 8-VDFN Exposed Pad
Win Source Part Number 1111136-TPCC8A01-H(TE12LQM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCC8A01-H(TE12LQM CAD Model

Description

The Toshiba Semiconductor and Storage 1111136-TPCC8A01-H(TE12LQM) is a MOSFET product with N-Channel polarity.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: 1111136-TPCC8A01-H(TE12LQM)
  • MOSFET Polarity: N-Channel
  • Power Dissipation (max): 700mW (Ta), 30W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Package: 8-TSON
  • Technology: SMD (SMT)
  • Application: Discrete semiconductor products
  • Supply and Demand: Balance
  • Status: Obsolete(EOL)
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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