The TPCF8004 is an N-channel MOSFET from Toshiba Semiconductor and Storage, optimized for high-efficiency power management applications. This MOSFET is designed to minimize conduction losses through a low on-resistance, making it ideal for DC-DC converters, load switching, and other power switching circuits.

Applications

• DC-DC Converters
• Load Switching
• Power Management Circuits
• Motor Control

Features

• N-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(on))
• Fast Switching Speed
• Small Surface Mount Package (LF(CM))
• Lead-Free Terminal Plating

Benefits

• Improved Power Efficiency Due to Low RDS(on)
• Reduced Power Dissipation and Heat Generation
• Suitable for High-Frequency Switching Applications
• Compact Design for Space-Constrained Applications
• Environmentally Friendly Due to Lead-Free Construction

Technical Specifications

The TPCF8004 has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 6A. The typical RDS(on) is 22 mΩ at VGS = 10V and 33 mΩ at VGS = 4.5V. The gate-source threshold voltage (VGS(th)) is between 1.0V and 2.5V. The device is provided in the LF(CM) surface-mount package. It is fully RoHS compliant, meeting environmental standards for lead-free manufacturing.

In summary, the TPCF8004 offers an efficient and compact solution for various power switching needs. Its low on-resistance, fast switching, and small package make it a valuable component in modern electronic designs where space and power efficiency are crucial.