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TPCF8101(TE85L.F)

Part No TPCF8101(TE85L.F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 12V 6A 8-PIN Vs T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Termination SMD/SMT
Contact Plating Silver, Tin
Continuous Drain Current (ID) 6 A
Current Rating -6 A
Drain to Source Breakdown Voltage -12 V
Drain to Source Resistance 28 mΩ
Drain to Source Voltage (Vdss) 12 V
Fall Time 21 ns
Gate to Source Voltage (Vgs) 8 V
Input Capacitance 2.15 nF
Lead Free Yes
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Cut Tape
Power Dissipation 2.5 W
Radiation Hardening No
Rds On Max 12.9 mΩ
Rise Time 7 ns
RoHS Compliant
Voltage Rating (DC) -12 V
Win Source Part Number 1100792-TPCF8101(TE85L.F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPCF8101(TE85L.F) CAD Model

Description

The Toshiba Semiconductor and Storage 1100792-TPCF8101(TE85L.F) is a surface mount transistor with a current rating of -6 A and a drain to source voltage of 12 V.

  • Power Dissipation: 2.5 W
  • Maximum Operating Temperature: 150°C
  • Lead-Free: Yes
  • RoHS Compliant: Yes
  • Number of Pins: 8
  • Input Capacitance: 2.15 nF
  • Gate to Source Voltage: 8 V

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