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Same model may have multiple batches, images only for reference.
TPCF8101 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCF8101

Part No TPCF8101
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 6A VS-8
Datasheet
TPCF8101 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 18nC @ 5V
Max Input Capacitance 1600pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-8 (2.9x1.5)
Dimension 8-SMD, Flat Lead
Win Source Part Number 097066-TPCF8101
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCF8101 CAD Model

Description

The Toshiba Semiconductor and Storage 097066-TPCF8101 is a P-channel MOSFET with a maximum power dissipation of 700mW (Ta).

  • Power Dissipation: 700mW (Ta)
  • Case/Package: VS-8 (2.9x1.5)
  • Dimensions: 8-SMD, flat lead
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 6A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 200μA
  • Maximum Gate Charge: 18nC @ 5V
  • Maximum Input Capacitance: 1600pF @ 10V
  • Maximum Rds On: 28 mOhm @ 3A, 4.5V
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Category: Discrete semiconductor product

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