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Same model may have multiple batches, images only for reference.
TPCF8102
Same model may have multiple batches, images only for reference.

TPCF8102

Part No TPCF8102
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 6A VS8 2-3U1A
Datasheet
TPCF8102 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 1550pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-8 (2.9x1.5)
Dimension 8-SMD, Flat Lead
Win Source Part Number 056841-TPCF8102
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCF8102 CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET component is a reliable and high-quality choice for electronic devices.

  • Polarity: P-Channel
  • Power Dissipation: 700mW (Ta)
  • Status: Obsolete (EOL)
  • Supply and Demand: Limited
  • Application: Discrete semiconductor products
  • Popularity: Medium

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