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Same model may have multiple batches, images only for reference.
TPCP8001-H
Same model may have multiple batches, images only for reference.

TPCP8001-H

Part No TPCP8001-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.2A PS-8
Datasheet
TPCP8001-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 640pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 3.6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PS-8 (2.9x2.4)
Dimension 8-SMD, Flat Lead
Win Source Part Number 056845-TPCP8001-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCP8001-H CAD Model

Description

Toshiba Semiconductor and Storage TPCP8001-H is an obsolete (EOL) MOSFET technology N-Channel polarity electronic component.

  • Supply and Demand: Sufficient
  • Manufacturer: Toshiba Semiconductor and Storage
  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation: 1W (Ta), 30W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: 150°C (TJ)
  • Case/Package: PS-8 (2.9x2.4)
  • Dimension: 8-SMD, flat lead
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7.2A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Max Gate Charge: 11nC @ 10V
  • Max Input Capacitance: 640pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 16 mOhm @ 3.6A, 10V

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305+ $1.1365 $346.6325
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