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Same model may have multiple batches, images only for reference.
TPCP8005-H Real Image
Same model may have multiple batches, images only for reference.

TPCP8005-H

Part No TPCP8005-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A PS-8
Datasheet
TPCP8005-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 840mW (Ta)
Maximum Rds On at Id,Vgs 12.9 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PS-8 (2.9x2.4)
Dimension 8-SMD, Flat Lead
Win Source Part Number 096655-TPCP8005-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCP8005-H CAD Model

Description

The TPCP8005-H is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 840mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Package: PS-8 (2.9x2.4)
  • Continuous Drain Current: 11A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On: 12.9 mOhm @ 5.5A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
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Availability: 4,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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