The TPCP8406 is a P-channel MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for efficient power management in various applications, including load switching, DC-DC conversion, and portable devices. It is characterized by its low on-resistance and gate charge, contributing to high efficiency and minimal power loss.

Applications

• Load Switches
• DC-DC Converters
• Portable Device Power Management
• Battery Protection Circuits

Features

• P-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(ON))
• Low Gate Charge (Qg)
• 1.8 V Drive Capability
• Surface Mount Device (SMD)
• Lead-Free Plating

Benefits

• Enhanced Power Efficiency due to Low RDS(ON)
• Minimized Power Loss and Heat Generation
• Simplified Gate Drive Circuitry
• Compact Size for Space-Constrained Applications
• Environmentally Friendly Due to Lead-Free Construction

Additional Details

The TPCP8406 features a low gate charge, which contributes to fast switching speeds and reduced power loss during switching. Its low on-resistance minimizes voltage drop and power dissipation when the MOSFET is in the ON state. This device is well-suited for applications such as power management in smartphones, tablets, and other portable devices. The 1.8V drive capability allows for direct logic-level control, simplifying the design process and reducing the number of required components. The small surface mount package makes it suitable for high-density circuit board layouts in compact electronic devices.

Specifications:

• V_DSS (Drain-Source Voltage): -30V
• I_D (Drain Current): -5A
• R_DS(on) (Drain-Source On-Resistance): 49 mΩ (V_GS = -4.5V), 82 mΩ (V_GS = -2.5V)
• P_D (Power Dissipation): 1.5W

The TPCP8406 is RoHS compliant.