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TPCP8501

Part No TPCP8501
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Description TOSHIBA Transistor Silicon NPN Epitaxial Type
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1271946-TPCP8501
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCP8501 CAD Model

Description

The TPCP8501 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for various switching applications, offering efficient power management and low on-resistance. The device comes in a small surface-mount package, making it suitable for compact electronic devices.

Applications

  • Load switching
  • Power management in portable devices
  • DC-DC converters
  • Motor control circuits
  • LED lighting control

Features

  • P-Channel MOSFET
  • Low on-resistance (RDS(on))
  • Small surface-mount package (SOP-8)
  • Low gate charge
  • High drain current (ID)
  • Pb-free and RoHS compliant

Benefits

  • Efficient power switching due to low RDS(on), minimizing power loss and heat generation.
  • Suitable for battery-powered devices due to low gate charge and efficient operation.
  • Compact size allows for integration into small form-factor devices.
  • Improved thermal performance compared to larger packages.
  • Environmentally friendly due to Pb-free and RoHS compliance.

Additional Details

The TPCP8501's low on-resistance (RDS(on)) is a critical parameter, as it determines the amount of power dissipated as heat when the MOSFET is conducting. A lower RDS(on) results in higher efficiency and reduced thermal stress on the device. The device's gate charge (Qg) affects the switching speed and power consumption. A lower gate charge allows for faster switching and reduced gate drive power requirements.

The small SOP-8 package allows for high-density board designs and facilitates automated assembly. The drain-source breakdown voltage (VDSS) is a crucial specification, indicating the maximum voltage the MOSFET can withstand without breaking down. The device is commonly used in a wide range of applications, from portable electronics to industrial equipment. Proper thermal management is essential to ensure reliable operation, especially at high currents and ambient temperatures. The TPCP8501 provides a good balance of performance, size, and cost, making it a popular choice for power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1617 $58.2120
870+ $0.1328 $115.5360
1,340+ $0.1294 $173.3960
1,855+ $0.1247 $231.3185
2,385+ $0.1213 $289.3005
3,195+ $0.1086 $346.9770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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